US20070048160A1

US20070048160A1 - Heat activated nanometer-scale pump

Info

Publication number: US20070048160A1
Application number: US11/490,408
Authority: US
Inventors: Joseph Pinkerton
Original assignee: Individual
Current assignee: CJP IP Holdings Ltd
Priority date: 2005-07-19
Filing date: 2006-07-19
Publication date: 2007-03-01
Also published as: WO2007012028A2; WO2007012028A3; EP1910217A2

Abstract

A pump is provided that includes a nanometer-scale beam that is suspended in a housing. The housing may include a number of apertures such that molecules can move in and out of the housing. The nanometer-scale beam may be suspended as a jump rope or as a cantilever. The movement of the nanometer-scale beam may be mechanically stopped from moving in a particular way (e.g., towards a particular end of the housing). Thus, for example, the beam and the stop work together to pump molecules in the direction that the beam bounces off the stop. The speed and movement of the nanometer-scale beam can also be influenced either electrostatically or electromagnetically. As such, the speed and direction that a working substance is pumped by a nanometer-scale beam may be electrically controlled.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional Patent Application No. 60/700,894 filed on Jul. 19, 2005 entitled “HEAT ACTIVATED NANOMETER-SCALE PUMP” (Docket No. AMB/007 PROV), which is hereby incorporated by reference herein in its entirety.

BACKGROUND OF THE INVENTION

This invention relates to nanometer-scale electromechanical systems (NEMs).
Nanometer-scale beams, such as carbon nanotubes and nanowires, can now be grown and assembled into a wide-variety of configurations. It is therefore desirable to fabricate nanometer-scale, as well as micrometer-scale, electromechanical structures that are operable to achieve a variety of useful functions.
Diamonds can now also be fabricated on semiconductor and shaped into useful structures. For example, a layer of diamond can be deposited and formed on a layer of semiconductor through a Chemical Vapor Deposition (CVD) process. The layer of diamond can then be etched.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide nanometer-scale, as well as micrometer-scale, structures that may be utilized in a variety of applications.
A pump is provided that includes a nanometer-scale beam, such as carbon nanotube or nanowire, that is suspended in a housing. The housing may include a number of windows such that molecules can move in and out of the housing. The nanometer-scale beam may be suspended as a jump rope (e.g., suspended loosely at both ends such) or as a cantilever (e.g., suspended at only one end). In placing a nanometer-scale beam parallel to a window, or in the vicinity of a window, the kinetic energy of a molecule entering the housing can advantageously be manipulated and utilized.
A mechanical stop may be provided to limit the potential movement of the nanometer-scale beam. Such a mechanical stop may be placed perpendicular to the nanometer-scale beam and located between the nanometer-scale beam and one of the windows. The mechanical stop may be, for example, another nanometer-scale beam, such as a nanotube or a nanowire, or a layer of carbon (e.g., a diamond).
A nanometer-scale beam may oscillate and move as a result of thermal vibrations in a working substance. Alternatively, heat, such as heat supplied by a heat source, may cause the molecule(s) of a nanometer-scale beam to move. For example, a carbon nanotube, suspended at one or both ends, may oscillate when heated.
When unusually fast working substance molecules hit part of a nanometer-scale beam located opposite a mechanical stop, the molecules will force the beam to rapidly move toward the mechanical stop, impact the stop, and then the beam may reverse its motion due to the collision with the stop. Instead of striking the working substance molecules in a direction toward the stop, the beam strikes working substance molecules in the opposite direction away from the stop. Thus, the beam and the stop work together to pump working substance molecules in a direction away from the stop. Thus, for example, the beam and the stop work together to pump molecules in the direction that the beam bounces off the stop.
In this manner, the movement of the nanometer-scale beam may be mechanically stopped from moving in a direction towards a window (or any particular direction or directions). Thus, the movement of the nanometer-scale beam may be mechanically influenced to move in a particular manner (e.g., in a particular range of motion). Thus, a molecule entering a window may impact the nanometer-scale beam and cause the nanometer-scale beam to move away from the window. In turn, the impacting molecule may, for example, bounce back through the window. Meanwhile, the nanometer-scale beam may impact a molecule residing in the housing. Thus, the impacted molecule may be forced through another window (e.g., a window opposite the window that is guarded by the nanometer-scale beam). The nanometer-scale beam may also be moved electrostatically or electromagnetically. Thus, the speed and direction that a nanometer-scale beam moves in may be controlled.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects and advantages of the present invention will be apparent upon consideration of the following detailed description, taken in conjunction with accompanying drawings, in which like reference characters refer to like parts throughout, and in which:
FIG. 1 is an illustration of a pump having a nanometer-scale beam constructed in accordance with the principles of the present invention;
FIG. 2 is an illustration of an exterior perspective of a pump having a nanometer-scale beam constructed in accordance with the principles of the present invention;
FIG. 3 is an illustration of a cross-section of a pump having a nanometer-scale beam constructed in accordance with the principles of the present invention;
FIG. 4 is an illustration of a cross-section of a pump having a nanometer-scale beam constructed in accordance with the principles of the present invention;
FIG. 5 is an illustration of a number of pump modules constructed in accordance with the principles of the present invention;
FIG. 6 is an illustration of an exterior view of a number of pump modules constructed in accordance with the principles of the present invention;
FIG. 7 is an illustration of a cross-section of a number of pump modules constructed in accordance with the principles of the present invention;
FIG. 8 is an illustration of nanometer-scale beam having a mechanical stop constructed in accordance with the principles of the present invention;
FIG. 9 is an illustration of a pump having a nanometer-scale beam constructed in accordance with the principles of the present invention; and
FIG. 10 is an illustration of the exterior of pump having a nanometer-scale beam with an external mechanical stop constructed in accordance with the principles of the present invention;
FIG. 11 is an illustration of a housing constructed in accordance with the principles of the present invention;
FIG. 12 is an illustration of a housing having multiple pumps constructed in accordance with the principles of the present invention;
FIG. 13 is an illustration of a housing having multiple pumps constructed in accordance with the principles of the present invention;
FIG. 14 is an illustration of a nanometer-scale cantilever constructed in accordance with the principles of the present invention;
FIG. 15 is an illustration of a nanometer-scale cantilever constructed in accordance with the principles of the present invention;
FIG. 16 is an illustration of a sphere having multiple nanometer-scale beams located on the exterior surface of the sphere constructed in accordance with the principles of the present invention;
FIG. 17 is an illustration of a housing having multiple electrically controlled nanometer-scale beams constructed in accordance with the principles of the present invention;
FIG. 18 is an illustration of a housing having multiple electrically controlled nanometer-scale beams constructed in accordance with the principles of the present invention;
FIG. 19 is an illustration of multiple electrically controlled nanometer-scale beams constructed in accordance with the principles of the present invention;
FIG. 20 is an illustration of multiple electrically controlled nanometer-scale beams constructed in accordance with the principles of the present invention;
FIG. 21 is an illustration of multiple nanometer-scale beams constructed in accordance with the principles of the present invention;
FIG. 22 is an illustration of multiple nanometer-scale beams constructed in accordance with the principles of the present invention;
FIG. 23 is an illustration of multiple nanometer-scale beams constructed in accordance with the principles of the present invention; and
FIG. 24 is an illustration of multiple nanometer-scale beams constructed in accordance with the principles of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

U.S. patent application Ser. No. 09/885,367 filed on Jun. 20, 2001 that issued as U.S. Patent No. 6,593,666 on Jul. 15, 2003 (Attorney Docket No. JP/001) is hereby incorporated by reference herein in its entirety.
U.S. patent application Ser. No. 10/453,326 filed on Jun. 2, 2003 (Attorney Docket No. AMB/002) is hereby incorporated by reference herein in its entirety.
U.S. patent application Ser. No. 10/453,783 filed on Jun. 2, 2003 (Attorney Docket No. AMB/003) is hereby incorporated by reference herein in its entirety.
U.S. patent application Ser. No. 10/453,199 filed on Jun. 2, 2003 (Attorney Docket No. AMB/004) is hereby incorporated by reference herein in its entirety.
U.S. patent application Ser. No. 10/453,373 filed on Jun. 2, 2003 (Attorney Docket No. AMB/005) is hereby incorporated by reference herein in its entirety.
U.S. patent application Ser. No. 11/185,219 filed on Jul. 19, 2005 (Attorney Docket No. AMB/006) is hereby incorporated by reference herein in its entirety.
FIG. 1 shows system 100 that includes nanometer-scale beam 151 suspended from mounting 170 as a cantilever. Nanometer-scale beam 151 is suspended inside of housing 110. Housing 110 includes two windows, window 130 and 120, that are aligned to one another on opposite sides of housing 110. The portion of nanometer-scale beam 151 not fixed to mount 170 is free-to-move. This portion may have a resting location aligned with window 130. For example, the free-to-move portion of nanometer-scale beam 150 may be aligned in parallel with window 130. At a result, a molecule entering window 130 (e.g., molecule 161) from the exterior of housing 110 may impact nanometer-scale beam 150 and cause, for example, nanometer-scale beam 151 to move through position 152 to position 150. In this manner, a molecule residing in housing 110 may be impacted and forced out of housing 110 through window 120. Mechanical stop 140 may be provided to prevent nanometer-scale beam 151 from moving in a direction towards window 130 that nanometer-scale beam 151 would otherwise be able to move in.
Mechanical stop 140 may take a variety of forms. For example, mechanical stop may take the form of a nanometer-scale beam, such as a nanotube, positioned between window 130 and nanometer-scale beam 150. Mechanical stop 140 may be provided perpendicular to nanometer-scale beam 150 such that a minimal area in front of window 130 is blocked.
Persons skilled in the art will appreciate that moving nanometer-scale beam 151 either electrostatically or electromagnetically (collectively referred to as moving nanometer-scale beam 150 electrically) in the presence of mechanical stop 140 will shape the movement pattern of nanometer-scale beam. Thus, a variety of different types of pumps may be provided that offer a variety of different thrust profiles. Such a profile can be changed, for example, by changing the location of mechanical stop 140. If mechanical stop 140 is a nanotube, for example, mechanical stop 140 may include slack such that the slacked portion can be moved electrostatically or electromagnetically. In providing multiple electrically controllable stops around a nanometer-scale beam, the movement pattern of the nanometer-scale beam may be modified in a variety of ways.
Persons skilled in the art will appreciate that a number of nanometer-scale beams 151 may be included in housing 110. Similarly a number of windows may be included in housing 110. Moreover, the size of a window may be dynamically changed in a variety of ways. For example, two nanometer-scale beams may be located behind opposite edges of a window such that the beams are not located in front of the window, but adjacent to the window. These nanometer-scale beams may be suspended and have slack such they may be electrically controlled to move in front of the window. In such a manner, the nanometer-scale beams can be controlled to form a new edge of the window and decrease the sides of the window perpendicular to the nanometer-scale beams by, for example, the thickness of the nanometer-scale beams. Such movement may be useful, for example, to increase thrust at a particular point in a window.
Persons skilled in the art will appreciate that if a mechanical stop is made from an electrically conductive material (e.g., a carbon nanotube), then the mechanical stop may be utilized to generate electrostatic forces to interact with a nanometer-scale beam to shape the movement pattern of that nanometer-scale beam.
A nanometer-scale beam may oscillate and move as a result of thermal vibrations in a working substance. Alternatively, heat, such as heat supplied by a heat source, may cause the molecule(s) of a nanometer-scale beam to move. For example, a carbon nanotube, suspended at one or both ends, may oscillate when heated. For example, a carbon nanotube may oscillate at any temperature above absolute zero.
FIG. 2 shows system 200 that includes housing 210, nanometer-scale beam 240, and mechanical stop 230 aligned in front of window 220. Nanometer-scale beam operates as follows. Molecule 252 enters window 220 and moves nanometer-scale beam 240 away from window 220. Thus, nanometer-scale beam 240 may impact molecule 252 and send molecule 252 out of a window opposite that of window 220. However, if molecule 252 were to impact nanometer-scale beam 240 and cause nanometer-scale beam 240 to move towards window 220, the movement of nanometer-scale beam 240 would be stopped and reversed by mechanical stop 230. Mechanical stop 230 may be placed anywhere in housing 210 such as, for example, aligned with the middle of window 220 and located perpendicular to nanometer-scale beam 240. The length of nanometer-scale beam 240 may, for example, traverse the entire length of window 220 or only to a length slightly past mechanical stop 230.
Persons skilled in the art will appreciate that no mechanical stop is required to limit the movement of a nanometer-scale beam. For example, if the nanometer-scale beam is longer than a window, and placed adjacent to the window, then the sides of the window will stop the nanometer-scale beam from moving outside of the window. Persons skilled in the art will also appreciate that housing 210 may be provided as a module and may be aligned with similar modules to, for example, increase the thrust produced by an array of such modules.
FIG. 3 shows system 300 that is cross-section A-A of system 200 of FIG. 2. System 300 may include housing 310, windows 320 and 330, nanometer-scale beam 351 being operable to move into at least positions 350 and 352, mounting 370, molecules 362 and 361 and mechanical stop 340.
FIG. 4 shows system 400 that is cross-section B-B of system 200 of FIG. 2. System 400 may include housing 410, windows 420 and 430, nanometer-scale beam 451 being operable to move into at least positions 450 and 452, mounting 470, molecules 462, 463, 461 and mechanical stop 440.
FIG. 5 shows system 500 that includes a number of pump modules 511-517 and 521-527 similar to, for example, system 100 of FIG. 1. Such modules may be anchored to a single base 501. The windows of a number of modules may be aligned together to form rows of such modules (e.g., the row including modules 511-517). A number of these rows may be provided to form, for example, a large pump. Thus, a row (e.g., the row including modules 511-517) may share a common input window (e.g., window 557) and a common output window (not shown).
FIG. 6 shows system 600 that includes pump modules 610, 620, and 630 aligned adjacent to one another and anchored to base 601.
FIG. 7 shows system 700 that shows cross-sectional C-C of system 600 of FIG. 6. System 700 includes a number of modules anchored to base 701. The modules are anchored in rows (such as the row defined by modules 710 and 720). Each module may include, for example, separate housing 710, mechanical stop 714, windows 715 and 711, nanometer-scale beam 713, and mounting 712. Persons skilled in the art will appreciate that adjacent modules may share a common wall. For example, modules 710 and 720 may share a common wall (or may have separate walls such that different arrays of modules can be easily fabricated).
FIG. 8 shows system 800 that may include a mechanical stop that may be parallel to a nanometer-scale beam. Such a mechanical stop may be, for example, fabricated from a layer of carbon (e.g., a diamond film). For example, mounting 820 may be formed that is originally the length of diamond film 830. A diamond film may then be deposited on mounting 820. A portion of the mounting may then be etched away such that the diamond film extends past the etched mounting 820. The length of such a diamond film can extend, for example, to the closest edge of a window. Persons skilled in the art will appreciate that the thermal, electrical, and structural properties of a diamond may be utilized in a number of ways in system 800.
FIG. 9 shows system 900 that includes nanometer-scale beam 910 with a diameter approximately equal, or greater than, the diameter of window 920.
FIG. 10 shows system 1000 that includes housing 1010 and window 1020. Nanometer-scale beam 1030 is suspended inside housing 1010. Diamond films, or one or more nanotubes, may be placed across window 1020 and act as mechanical stops. For example, a diamond film can be fixed to either the interior, or exterior, surface of housing 1010 at locations 1040 or 1050. Persons skilled in the art will appreciate that a diamond film may be deposited and formed on a substrate. The substrate may then be etched away—leaving just the diamond film. This diamond film can then be placed on another object (e.g., housing 1010). Alternatively, a diamond film can be formed on a housing and then a window can be etched into the housing about a diamond film.
FIG. 11 shows assembly 1100 that may include a single housing that includes top housing portion 1110 and base 1120. Inlet/ Outlet apertures 1111, 1112, and 1113 may be included in housing portion 1110 to allow a working substance to enter, or exit, the single housing. Any number of heat-activated pumps may be included in the single housing. For example, the single housing may include millions of nanometer-scale pumps based on nanometer-scale beams having a portion that is free-to-move (e.g., cantilevers or jump ropes). Such nanometer-scale beams may be driven by thermal vibrations that exist in a working substance (e.g., a gas, liquid, or plasma). Mechanical stops may be placed in the vicinity of a free-moving portion of any number of nanometer-scale beams in order to influence the speed and direction the free-moving portion is able to move. The movement of the free-moving portion may also be influenced electrically (e.g., either electrostatically or electromagnetically).
For example, charge member layers may be included in the proximity of a free-moving portion such that a charge (e.g., a DC voltage) placed on a charge member layer creates a force that can electrostatically interact with the free-moving portion. Expanding this example, a second charge (e.g., a DC or AC voltage) may be placed on the nanometer-scale beam such that the second charge can electrostatically interact with the charge imposed on the nearby charge member layer. By electrically influencing a heat-activated pump, the movement of the nanometer-scale beam generated by the thermal vibrations of the working substance and/or beam molecules may be influenced. For example, the maximum displacement locations, with respect to a resting location, of a moving nanometer-scale beam may be modified.
A nanometer-scale beam may oscillate and move as a result of thermal vibrations in a working substance. Alternatively, heat, such as heat supplied by a heat source, may cause the molecule(s) of a nanometer-scale beam to move. For example, a carbon nanotube, suspended at one or both ends, may oscillate when heated.
FIG. 12 shows system 1200 that may include top housing portion 1210 and base 1220. Apertures of the same (or different) shape and size having a uniform (or non-uniform) spacing between the apertures may be provided on housing portion 1210. For example, aperture 1211 may be provided on housing portion 1210. A portion of mechanical stop 1230 may be vertically and horizontally aligned with aperture 1211. Mechanical stop 1230 may be utilized to limit the movement of nanometer-scale beam 1241 in one or more directions. Nanometer-scale beam 1241 may be heat-activated such that motion is generated in nanometer-scale beam 1241 as a result of, for example, thermal vibrations in a working substance including multiple molecules 1251.
FIG. 13 shows nanoelectromechanical system 1300 that included numerous nanometer-scale beams that may be used for pumping a working substance or sensing characteristics about a working substance. System 1300 may be cross-sectional D-D (i.e., line 1920) of housing 1200 of FIG. 12.
FIG. 13 includes housing portion 1310 fixed to base portion 1320 to form a housing. Apertures 1361 and 1362 are included in housing portion 1310. A working substance may be passed through apertures 1361 1362. Apertures 1361 and 1362 may be provided on opposite walls of housing 1310 and may be aligned both vertically and horizontally. For example, a working substance may enter, or may be influenced to enter, aperture 1361. A working substance may be influenced to enter an aperture in numerous ways. For example, the heat exhaust of a system may be coupled directed to an aperture such that a heated working substance is exhausted into the chamber defined by housing portions 1310 and 1320.
Any number of nanometer-scale pumps may be provided in system 1300. Such nanometer-scale pumps may be positioned in any number of rows and columns. Rows and/or columns may additionally be aligned with apertures such as apertures 1361 and 1362. For example, the midpoint, or any point of each of the nanometer-scale beams of a nanometer-scale pump may be aligned with the midpoint of an aperture.
Nanometer-scale pumps may be fabricated from nanometer-scale beams. Such nanometer-scale beams may be suspended from one end to form a cantilever or from both ends to form a jump rope. Thus, a suspended nanometer-scale beam may include at least one portion that is free to move. A nanometer-scale beam that is attached to a mount only in the center of the nanometer-scale beam may, for example, have two portions that are free-to-move.
Mechanical stop 1334 may be provided to limit the movement of a nanometer-scale beam in one or more directions. Mechanical stop 1334 may be a nanometer-scale beam or any other type of structure. For example, mechanical stop 1334 may be a nanotube, or nanowire, positioned perpendicular to base 1320 (e.g., grown vertically from base 1320). Mechanical stop support 1335 may also be provided to mechanically support mechanical stop 1335.
Mechanical stop 1334 may be non-conductive and mechanical stop support 1335 may be conductive such that a charge may be placed on mechanical stop support 1334. As mechanical stop 1334 may be non-conductive, mechanical stop 1334 may insulate nanometer-scale beam 1333 from making a physical electrical connection, but may still allow for a charge on mechanical stop support 1335 to electrostatically interact with nanometer-scale beam 1333. Particularly, a charge on mechanical stop support 1334 may electrostatically interact with a charge on nanometer-scale beam 1333.
A charge may be applied to nanometer-scale beam 1333. Such a charge may be controlled, in both polarity and magnitude, by control circuitry. Accordingly, nanometer-scale beam 1333 may be electrically coupled to an interconnection. Such an electrical coupling may occur through mounting 1331 and/or mounting 1332. Alternatively, an electrical interconnection may be physically connected to nanometer-scale beam 1333.
A nanometer-scale beam may also be electrostatically influenced from charge members located around a nanometer-scale beam. For example, multiple charge member layers may be located beneath, in, or above base 1320 and positioned near a nanometer-scale beam.
Persons skilled in the art will appreciate that the position of a mechanical stop may limit the range of a nanometer-scale beam. For example, changing the distance from a mechanical stop to a nanometer-scale beam in a resting location, or the position relative to a midpoint of the nanometer-scale beam, may affect the range the nanometer-scale beam can move. Additionally, multiple stops may be placed around a beam. For example, a stop on one side of a beam may be twice as far from the beams resting position as a stop on the other side of the beam.
System 1300 may also, for example, be utilized to sense the movement of molecules or the movement of a housing. For example, mechanical stop 1334 may be electrically conductive and control circuitry may provide a charge on the mechanical stop from a source of electrical energy (e.g., a voltage source). Thus, for example, whenever a nanometer-scale beam physically touches a mechanical stop, the beam may take on a charge similar to the stop. Sense circuitry may be coupled to the nanometer-scale beam to determine when the beam takes on a charge. The frequency of such occurrences may, for example, be indicative of the speed that a nanometer-scale beam is cycling in. Such a sensing capability may be utilized in numerous applications. For example, such a sensing capability may be utilized to implement an accelerometer or other inertial movement sensing device. As per another example, such a sensing capability may be utilized after fabrication, or at any time, to determine which nanometer-scale beams are not working (e.g., were fabricated incorrectly or have failed). Accordingly, control circuitry, such as a processor, may utilize an array of pumps in a particular manner in response to failed pumps. As per yet another example, such a sensing capability may be utilized to determine how a working substance is moving through certain regions such that pumps in those regions (or other regions) may be electrically influenced in a particular manner.
Persons skilled in the art will appreciate that nanometer-scale beam 1333 may be electromagnetically influenced instead of electrostatically influenced. For example, a magnetic field generator may be provided in, or outside of, housing 1310 and may provide a magnetic field that interacts with a current running through nanometer-scale beam 1333. As such, a current may be run through nanometer-scale beam 1333 and the direction and magnitude of the current may be controlled by control circuitry.
Persons skilled in the art will appreciate that a pump does not need any type of electrical influence to operate. A molecule may, for example, impact a free-moving portion of a nanometer-scale beam and cause the free-moving portion to move. The movement of the free-moving portion may be limited, and influenced, mechanically by a mechanical stop. Thus, a heat-activated pump may be realized. Thermal vibrations may occur in a working substance having a particular temperature that appears uniform on the macrometer scale. Such thermal vibrations may activate the pumps to operate even in a working substance having a particular temperature that appears uniform on the macrometer scale.
In addition to influencing pumps thermally, pumps may be electrically controlled. For example, pumps may be electrically controlled to move in a particular way at a particular time. Thus, multiple nanometer-scale beams may be moved in relation to one another in order to maximize thrust in a particular direction or directions. For example, nanometer-scale beam 1351 may be away from a mechanical stop while nanometer-scale beam 1354 is away from a mechanical stop. Nanometer-scale beam 1352 may be near, or passing through, a resting location while nanometer-scale beam 1355 is near, or passing through, a resting location. Nanometer-scale beam 1353 may be physically contacting a mechanical stop while nanometer-scale beam 1356 is physically contacting a mechanical stop.
FIG. 14 shows pump 1400 that may include nanometer-scale beam 1420 and mechanical stop 1451 and 1452. Charge member layers 1432 and 1433 may be provided and may be located under an isolation layer. As such, mechanical stops may be isolated from charge member layers and nanometer-scale beam 1420 may be influenced depending on the thickness and composition of the isolation layers. Nanometer-scale beam 1420 may be suspended from mounting 1431 on one end (e.g., to form a cantilever) or both ends (to form a jump rope). Mounting 1431 may also be, for example, conductive such that a charge may be imposed on nanometer-scale beam 1420. Alternatively, mounting 1431 may be non-conductive such that nanometer-scale beam 1420 may be isolated.
FIG. 15 shows pump 1500 that may be cross-sectional E-E (i.e., line 1490) of FIG. 14. Pump 1500 may include base 1540, isolation layer 1551, charge member layer 1561, charge member layer 1562, mounting assembly 1510, mechanical stop 1531, mechanical stop 1532, and nanometer-scale beam 1520. Nanometer-scale beam 1520 may be fixed to mounting assembly 1510 at end 1521 to form a cantilever (and may also be fixed at another mounting assembly on the end opposite end 1521 to form a jump rope).
Persons skilled in the art will appreciate that charge member layer 1561 may be provided with a charge of one polarity while charge member layer 1562 is provided with a charge having an opposite polarity. For example, charge member layer 1561 may be provided with a positive charge while charge member layer 1562 is provided with a negative charge. Thus, if nanometer-scale beam 1520 is provided with a positive charge, nanometer-scale beam 1520 may be influenced towards charge member layer 1562 and away from charge member layer 1561. Alternatively, for example, if nanometer-scale beam 1520 is provided with a negative charge and charge member layer 1561 is provided with a positive charge, nanometer-scale beam 1520 may be influenced towards charge member layer 1561.
The charges on any particular charge member layer, or any nanometer-scale beam, may be provided at any particular time and adjusted in polarity and magnitude by control circuitry (e.g., a processor). Multiple nanometer-scale beams or charge member layers may be arrayed together in a parallel configuration, series configuration, a combination of parallel and series configurations, or any other configurations. Doing so may, for example, allow control circuitry to control the charges of multiple charge member layers and/or nanometer-scale beams by controlling a single node.
Persons skilled in the art will appreciate that a particular working substance operating in a particular manner may cause nanometer-scale beam 1520 to have an average and a maximum displacement towards mechanical stop 1531 and 1532 with respect to a resting location. Such a resting location may be configured to be, for example, the midpoint between mechanical stop 1531 and 1532. Thus, properly configured charges on charge member layers 1561 and 1562 may adjust such average and maximum displacements by, for example, shifting these displacements towards a particular stop or stops.
FIG. 16 shows system 1600 that includes spherical base 1610 that includes numerous nanometer-scale pumps 1640 (or sensors) on the exterior surface of spherical base 1610. Each nanometer-scale pump may include, for example, nanometer-scale beam 1642 and mechanical stop 1641. Persons skilled in the art will appreciate that spherical base 1610 may be fabricated in a shape other than a sphere such as, for example, a cube, cylinder, pyramid, or any other three-dimensional structure.
Spherical base 1610 may form a chamber inside spherical base 1610 such that additional circuitry and nanometer-scale systems (e.g., pumps/sensors) may be placed inside of spherical base 1610. For example, control and power circuitry 1630 may be placed in the center of spherical base 1610 and held in place by supports 1670. Control and power circuitry may be positioned such that the center of gravity of spherical base 1610 and control and power circuitry 1630 are approximately equal. Thus, if spherical base 1610 were to be rolled, the roll would be relatively uniform and the sphere would not wobble or favor a particular spot of spherical base 1610. Supports 1620 may also include interconnections (e.g., supports 1620 may be hollow) to send and receive signals (e.g., power/control/sense signals) to and from nanometer-scale assemblies located on the exterior of spherical base 1610.
The spherical nature of spherical base 1610 may be useful, for example, as a propulsion system. Nanometer-scale pumps may push molecules of a working substance in any direction away from mechanical stop 1641 and, as such, may propel spherical base 1610 in any direction. Additional circuitry may be included in spherical base 1610 such as, for example, a communications receiver and transmitter. Similarly, additional circuitry may be placed on the exterior surface of spherical base 1610 such as, for example, sensors. Thus, the external sensors may obtain information and transmit such information through the communications transmitter. Spherical base 1610 may then move to take new sensor readings.
FIG. 17 shows system 1700 that may include housing portion 1710, housing portion 1740 (e.g., a base), charge member layer 1750, isolation layer 1730, mechanical stops 1770 and 1760, and inlet and/or outlet aperture 1780.
FIG. 18 shows system 1800 that includes isolation layer 1850, mechanical stops 1833 and 1832, nanometer-scale beam 1840, aperture inlets and/or outlets 1881-1183, housing portions 1820 and 1810.
FIG. 19 shows system 1900 that may be, for example, similar to cross-section F-F (i.e., line 1891) of system 1800 of FIG. 18. System 1900 includes nanometer-scale beams in a cantilever configurations that are located along a common channel between an input aperture and an output aperture, but that have free-moving portions that face multiple directions. For example, nanometer-scale beam 1922 faces one direction while nanometer-scale beam 1931 faces another direction. By facing nanometer-scale beam cantilevers in opposite directions, the mechanical stops for each beam may be aligned with one another. Doing so, reduces the surface area required for a nanometer-scale pump such that more nanometer-scale pumps may be located in a particular housing or on a particular surface.
The midpoints of the free-moving portions of nanometer-scale beam 1931 and 1922 may be aligned with one another. Nanometer-scale beam 1922 may utilize mechanical stops 1912 and 1911. Nanometer-scale beam 1931 may utilize mechanical stops 1941 and 1942. Mechanical stops 1941 and 1911 may be aligned with one another due to, for example, nanometer-scale beams 1922 and 1931 facing in opposite directions. Molecules 1921 may drift, or be pushed, into system 1900 through an aperture. Nanometer-scale beam 1922 may be fixed to mounting 1920. Nanometer-scale beam 1931 may be fixed to mounting 1930.
Persons skilled in the art will appreciate that common charge members may be located underneath, for example, aligned stops such that a charge member layer may influence two, or more than two, nanometer-scale beams. Alternatively, a charge member layer may be positioned, and fabricated, such that the charge member layer can only influence a single nanometer-scale beam. If, however, a charge member layer influences two nanometer-scale beams that are positioned in opposite directions then one, more, or all of, the nanometer-scale beams may be provided a charge of one polarity while all of the nanometer-scale beams that face in the opposite direction may be provided with a charge of an opposite polarity. In doing so, a charge member layer may influence both nanometer-scale beams in the same way. For example, a charge member layer having a positive charge may push a positively charged nanometer-scale beam 1922 in one direction and may attract a negatively charged nanometer-scale beam 1931 in the same direction. Each nanometer-scale beam may be isolated from one another and may be provided with its own charge having a particular polarity and magnitude.
FIG. 20 shows system 2000 that may be, for example, similar to cross-section G-G (i.e., line 1892) of system 1800 of FIG. 18. System 2000 may include any number of nanometer-scale beams 2030 fixed to mounting 2040 and limited in movement by mechanical stops 2060 and 2050. Nanometer-scale beam 2030 may be electrically influenced by charge member layer 2080 physically isolated from nanometer-scale beam 2030 by isolation layer 2070. Housing portions 2090 and 2010 may provide a chamber to house nanometer-scale beam 2030 and may provide aperture 2099 to access the chamber.
FIG. 21 shows system 2100 that may include a housing defined by portions 2110 and 2111. An aperture (not shown) may be located underneath space 2110 and above portion 2111 such that a working substance may flow in/out from the aperture in-between nanometer-scale pumps. Charge member layer 2120 may be included to electrically influence nanometer-scale beams 2131-2133. Charge member layer 2121 may be included to electrically influence nanometer-scale beams 2134-2136. Charge member layers 2120 and 2121 may be isolated from nanometer-scale beams or may not be isolated from nanometer-scale beams. By not isolating a charge member layer, the layer may have a more profound influence on a particular nanometer-scale beam. Additionally, a charge member able to physically connect with a nanometer-scale beam may be utilized to receive a charge from a nanometer-scale beam (e.g., sense the connection) or provide a charge directly to the nanometer-scale beam (e.g., if the beam is used to sense the connection). A mechanical stop may be utilized to also provide such sensing methodologies.
Mountings for nanometer-scale beams may also provide a charge to a nanometer-scale beam. For example, a charge may be provided to nanometer-scale beam 2133 through mounting 2141 (or though a different electrical connection). Thus, a positive charge on nanometer-scale beams 2131-2133 and a positive charge on charge member layer 2120 may, if of the proper magnitude, lift nanometer-scale beams 2131-2133 such that the beams are a particular vertical distance from charge member layer 2120. Nanometer-scale beams 2131-2133 may then operate at this vertical distance. Thus, for example, the operation of nanometer-scale beams may be easily turned ON and OFF. For example, a charge member layer such as charge member layer 2121 may be provided with a negative charge and nanometer-scale beams 2134-2136 may be provided with a positive charge. Thus, nanometer-scale beams 2134-2136 may be attracted to charge member layer 2121 and may, if strong enough, physically connect to, and electrically latch onto, charge member layer 2121. In this manner, the nanometer-scale pumps may not respond to a working substance passing by the pumps, or attempting to heat-activate the pumps. Persons skilled in the art will appreciate that charge member layers may be utilized only to attract a nanometer-scale beam as the nanometer-scale beams may be heat-activated and pump as a result of thermal vibrations in a working substance and/or nanometer-scale beam. Thus, charge member layers may be utilized only to stop particular nanometer-scale beams from moving (e.g., turning those beams OFF). As such, a charge member layer may be configured only to receive a charge of a particular polarity (e.g., positive or negative) and a nanometer-scale beam in the vicinity of such a charge member layer may be configured only to receive a charge of an opposite polarity (e.g., negative or positive, respectively).
Housing portion 2151 may be, for example, the perspective taken from cross-section H-H of housing portion 2110 (e.g., line 2149). Nanometer-scale beam 2161 may be mounted on mounting 2180. Mechanical stop 2171 (e.g., a carbon single or multi-walled nanotube) may be, for example, aligned with the end of free-moving portion 2162 such as the tip of nanometer-scale beam 2161 impacts stop 2171 when displaced toward stop 2171. Stop 2171 may be located on the side of nanometer-scale beam 2161 away from aperture 2199 and toward an aperture located about location 2197. Stop 2181 may be located on an opposite side of nanometer-scale beam 2191 such as the side toward an aperture located about position 2198 and away from aperture 2199. Person skilled in the art will appreciate that a nanometer-scale beam may be limited in range of movement on the side having a mechanical stop. Thus, the nanometer-scale beam may have an extended range of movement on a side without a mechanical stop. Thus, both nanometer- scale beams 2161 and 2191 may have extended range of motion towards aperture 2199 that is located between nanometer- scale beams 2161 and 2191 and have limited range of motion towards apertures 2197 and 2198, respectively.
FIG. 22 shows nanometer-scale beams 2221-2223 that are turned OFF by charge member layer 2211 and nanometer-scale beams 2224-2226 that are in operation as a result of the state of charge member layer 2212 (e.g., no charge being provided to layer 2212). Base 2251 may be, for example, cross sectional I-I (i.e., line 2299). Persons skilled in the art will appreciate that a charge member layer may extend the length of a nanometer-scale beam. For example, a charge member layer may be provided underneath (and unexposed) the entire nanometer-scale beam 2261, the entire portion of nanometer-scale beam 2261 that is free-moving, or just around tip portion 2262 of nanometer-scale beam 2261.
Persons skilled in the art will appreciate that one or more sources of heat may be placed in the vicinity of nanometer-scale pumps or a working substance being utilized by nanometer-scale pumps. For example, heat sources 2281 and 2282 may be utilized to heat separate, or the same, nanometer-scale pumps. Nanometer-scale beams may move in reaction to heat even without a working substance or electrical influence/control. Particularly, the molecule(s) of a nanometer-scale beam may oscillate in reaction to heat. Thus, nanometer-scale pumps may operate as, for example, a vacuum-pump and may be powered by heat sources 2281 and/or 2282. Multiple heat sources may be utilized at different temperatures to change the amount of heat imposed on any particular nanometer-scale beams. Thus, the rate of movement of any particular nanometer-scale pumps may be influenced by heat. Heat sources 2281 and 2282 may be mechanically coupled to a chamber having any number of nanometer-scale beams and/or pumps.
Turning nanometer-scale beams 2221-2223 ON, and nanometer-scale beams 2224-2226 OFF, may cause a working substance to be pumped from the left of nanometer-scale beams 2221-2223 to the right of nanometer-scale beams 2221-2223 and, for example, past nanometer-scale beams 2224-2226. Turning nanometer-scale beams 2221-2223 ON, and nanometer-scale beams 2224-2226 OFF, may cause a working substance to be pumped from the right of nanometer-scale beams 2224-2226 to the left of nanometer-scale beams 2224-2226 and, for example, past nanometer-scale beams 2221-2223.
Persons skilled in the art will appreciate that a mechanical stop may be mechanically moved toward or away from a nanometer-scale beam. For example, a piezoelectric layer may be coupled to a mechanical stop (e.g., a nanotube) and an electrical charge may be supplied to the piezoelectric layer to change the thickness of the piezoelectric layer thus changing the distance of the mechanical stop to the nanometer-scale beam.
Persons skilled in the art will appreciate that a nanometer-scale beam may have an average range, and average midpoint, of motion. Such an average range, and average midpoint, of motion may be electrically (e.g., electrostatically and electromagnetically) or heat influenced and controlled.
Persons skilled in the art will also appreciate that a nanometer-scale beam may have an orientation at which the nanometer-scale beam is not bent with respect to a mounting (either vertically, horizontally, or both vertically and horizontally). A nanometer-scale beam may move in particular directions at particular average, or maximum distances for a particular environment (e.g., a vacuum having a particular heat). Such average and/or maximum distances may be electrically (e.g., electrostatically and electromagnetically) or thermally controlled.
Nanometer-scale position 2277 may be the position that free-moving portion 2279 of nanometer scale beam 2278 is not bent with respect to stationary portion 2280 of nanometer-scale beam 2278 (e.g., not bent horizontally or horizontally and vertically). Due to mechanical stop 2276, nanometer-scale beam 2278 may not physically move past, for example, position 2274. Thus, nanometer-scale beam 2278 may only move, at maximum, distance 2272. Distance 2272, however, may be changed. For example, a charge of a particular polarity (e.g., negative) may be placed on nanometer-scale beam 2278 (e.g., via an electrically conducting mount) and a charge of that same polarity may be placed on, or around, stop 2276. The electrostatic repulsion forces of these two charges may, for example, never allow beam 2278 to physically contact stop 2276—thus shortening distance 2272. Persons skilled in the art will appreciate that the repulsion forces may be configured to a degree such that nanometer-scale beam 2278 never, or rarely, goes past location 2277 (e.g., the location where a nanometer-scale beam may be straight, and not bent, either horizontally or horizontally and vertically). A charge member layer may, for example, be placed about position 2273 to similarly modify distance 2271 so that nanometer-scale beam 2278 may not move to position 2273.
No mechanical stop may be provided to limit the movement of a nanometer-scale beam in particular locations that the nanometer-scale beam could otherwise move into. A nanometer-scale beam may, without a mechanical stop, take on a particular oscillation frequency in a particular environment. For example, a nanometer-scale beam suspended at one end to form a cantilever may oscillate in a particular range of frequencies in a vacuum at a particular temperature. That same nanometer-scale beam may oscillate at a different range of frequencies in the same vacuum, but at a different particular thresholds. Charge member layers and/or mechanical stops may be utilized to change the range of the frequency of collision with a mechanical stop for a particular temperature.
Sources of heat may be provided from a variety of sources. For example, a source of heat may be a microprocessor that is in operation. Another source of heat may be a battery that is in operation. Yet another source of heat may be circuitry that is in operation. Additional sources of heat may take the form of, for example, the sun, a source of light (e.g., a lamp or LED), or combusting fuel.
Persons skilled in the art will appreciate that the thickness of a mechanical stop if, for example, produced from the same material as a related nanometer-scale beam may be configured to be greater than the thickness of the nanometer-scale beam. Such a greater thickness may allow a stop to receive an impact from a related nanometer-scale beam without bending. The height of a mechanical stop (e.g., a mechanical cylindrical-shaped stop aligned vertically with respect to a base) may be reduced in order to increase the stiffness of the mechanical stop.
Generally, the mechanical stop may be thicker, made from a stiffer material, and/or shorter than a nanometer-scale beam such that the mechanical stop does not bend substantially when physically hit by one or more nanometer-scale beams. A stop may, as in one example, be a multi-walled carbon nanotube while a nanometer-scale beam is a single walled carbon nanotube. Alternatively, if three nanometer-scale beams may contact a mechanical stop at any one time, the mechanical stop may be, for example, three times thicker than the largest one of the three nanometer-scale beams (and the three beams may have approximately the same dimensions).
Fuel may be placed in a chamber and the fuel may be combusted. Combusting fuel may provide heat that can be used to power nanometer-scale pumps which may, in turn, circulate remaining heat by pumping the working substance (e.g., exhaust or a working substance heated by the combusting fuel). Control circuitry 2290 may be utilized to provide control signals to, for example, any number of charge member layers (e.g., charge member layer 2212) or nanometer-scale beams (e.g., nanometer-scale beam 2226). Similarly, control signals may be provided to control circuitry 2290 to instruct control circuitry 2290 how to control a particular charge member layer or nanometer-scale beam. Such control signals may be provided from, for example, one or more logic circuits (e.g., microprocessors) or sensors (e.g., a sensor sensing the movement of a nanometer-scale beam). Persons skilled in the art will appreciate that a working substance pumped by one or more nanometer-scale beams may be utilized in a variety of ways. For example, an electrical engine-generator may be coupled to an output aperture. A working substance may then be pumped from an input aperture to, and through, the output aperture such that the working substance is pushed through an electrical engine-generator. The electrical engine-generator may then convert the kinetic energy of the working substance created by the nanometer-scale pumps into an electrical energy and supply this electrical energy to, for example, one or more batteries.
FIG. 23 shows system 2300 that may include multiple nanometer-scale beams fixed to one, or more, mounts 2310 in different directions. For example, four nanometer-scale beams 2321-2324 may be positioned at right angles to one another along the same plane. Persons skilled in the art will appreciate that two additional nanometer-scale pumps may be located at right angles on the z-plane. Such a configuration may provide pumping in every direction on the plane that the pumps are located in. With the inclusion of two additional pumps in the z-plane, the assembly may provide thrust in any direction in the three dimensional x-y-z plane. Each nanometer-scale beam may be provided with one, two, or any number of mechanical stops. For example, mechanical stop 2331 may be located to the left of nanometer-scale beam 2321 and mechanical stop 2340 may be located to the right of nanometer-scale beam 2321. Charge member layers 2330 and 2341 may provide support to stops 2331 and 2340, respectively as well as electrostatically influence nanometer-scale beam 2321. A charge member layer and stop combination may also be provided above, and below nanometer-scale beam 2321. An electrically conductive stop may alternatively, for example, be utilized such that the functionality of a charge member layer may be realized in the electrically conductive stop (e.g., a carbon nanotube). Thus, nanometer-scale beams may be bent, or influenced, in a particular direction. For example, nanometer- scale beams 2351 and 2352 may be displaced, or influenced, in a desired directions.
FIG. 24 shows system 2400 that may include multiple nanometer-scale beams aligned horizontally, and stacked vertically, to one another. System 2400 may be, for example, cross-sectional J-J (i.e., line 2399) of system 2300 of FIG. 23. For example nanometer-scale beams 2441-2443 may be stacked vertically and may be influenced by charge members 2420 and 2430 and/or stops 2421 and 2431. Nanometer-scale beams 2441-2443 may be coupled to a mount that is, in turn, coupled to base 2410. Nanometer-scale beam 2453 illustrates how all the nanometer-scale beams may be controlled to move in the same direction by a mechanical stop (e.g., stops 2451 and 2452) or charge member layers. Mechanical stops may be tilted at an angle from a base. For example, mechanical stops 2481 and 2482 may have a slope that is not perpendicular to base 2480. As such, the range of the movement of nanometer-scale beams 2483-2485 may be limited (or influenced) differently by a single mechanical stop or a charge member layer (e.g., an electrically conductive mechanical stop imposed with a charge). Such a configuration may, for example, influence a group of nanometer-scale beams to create (e.g., pump) a vortex effect. All nanometer-scale beams may be attached to the same mount (which may be electrically conductive and operable to receive a charge). Stops 2481 and 2482 may extend the length of nanometer-scale beams 2483-2485 or may be, for example, nanotubes that only cover a length of nanometer-scale beams 2483-2485 that is approximately equal to the width of the nanotubes.
Persons skilled in the art will appreciate that a pump having a nanometer-scale beam may be utilized, for example, as a compressor, fan, and propulsion device. Moreover, a pump system may work without any windows. For example, a housing may form a channel with an inlet and an outlet. An array of nanometer-scale beams may be free to move and vibrate due to thermal motion and mechanical stops may be near the vibrating portion of these nanometer-scale beams to prevent the nanometer-scale beam from fully extending in the direction of the inlet. To stop a nanometer-scale beam from being able to move, or to stop the pump, a voltage of one polarity may be applied to a nanometer-scale beam and, for example, a voltage of another polarity may be applied to either the mechanical stop or a portion of the housing. Thus, the nanometer-scale beam may be forced to clamp to a particular portion of a system so that the nanometer-scale beam cannot move. Alternatively, one or more inlets/outlets and/or windows may be closed. Such openings may be closed, for example, by placing something over the openings such as moving one or more nanometer-scale beams into the openings to block the openings.
From the foregoing description, persons skilled in the art will recognize that this invention provides nanometer-scale electromechanical assemblies systems. Nanometer-scale electromechanical assemblies and systems are used in a variety of applications. For example, properly tailored nanometer-scale electromechanical assemblies and systems can be utilized in applications such as transistors, amplifiers, memory cells, automatic switches, diodes, variable resistors, magnetic field sensors, temperature sensors, electric field sensors, pumps, compressors, and logic components.
In addition, persons skilled in the art will appreciate that the various configurations described herein may be combined without departing from the present invention. It will also be recognized that the invention may take many forms other than those disclosed in this specification. Accordingly, it is emphasized that the invention is not limited to the disclosed methods, systems and apparatuses, but is intended to include variations to and modifications therefrom which are within the spirit of the following claims.

Claims

1. A system comprising:

a housing having a plurality of windows; and

a nanometer-scale beam having at least one portion that is free-to-move, but inoperable to move through at least one of said plurality of windows due to a mechanical stop.

2. A system comprising:

a base;

a working substance having a plurality of molecules;

a nanometer-scale beam coupled to said base and having a portion that is free-to-move, wherein said nanometer-scale beam is immersed in said working substance; and

a mechanical stop coupled to said base and located within the vicinity of said nanometer-scale beam such that said mechanical stop limits the movement of said free-moving portion, wherein said limited motion of said free-moving portion alters the average velocity of said working substance.

3. The system of claim 2, wherein said nanometer-scale beam is provided in a cantilever configuration.

4. The system of claim 2, wherein said nanometer-scale beam is provided in a jump rope configuration.

5. The system of claim 2, wherein said free-moving portion is operable to move into a position that is substantially parallel to said base.

6. The system of claim 2, wherein said free-moving portion is operable to move into a position that is substantially parallel to said base and said mechanical stop is located in a position that is substantially vertical to said base.

7. The system of claim 2, wherein said mechanical stop is the only structure limiting the movement of said free-moving portion and said mechanical stop is located on one side of said nanometer-scale beam to limit the range of movement of said free-moving portion on said one side.

8. The system of claim 2, wherein said mechanical stop is the only structure limiting the movement of said free-moving portion, said mechanical stop is located on one side of said nanometer-scale beam to limit the range of movement of said free-moving portion on said one side and said nanometer-scale beam includes a stationary portion that is coupled to said base via a mounting.

9. The system of claim 2, wherein said mechanical stop comprises a layer of carbon.

10. The system of claim 2, wherein said mechanical stop is thicker than said nanometer-scale beam.

11. The system of claim 2, wherein said mechanical stop is cylindrical in shape.

12. The system of claim 2, wherein said mechanical stop is fabricated from the same material as said nanometer-scale beam.

13. The system of claim 2, wherein said mechanical stop is fabricated from a first material, said nanometer-scale beam is fabricated from a second material, and said first material has a greater stiffness per unit volume than said second material.

14. The system of claim 2, wherein the longest dimension of said nanometer-scale stop is less than the longest dimension of said mechanical beam.

15. The system of claim 2, wherein said nanometer-scale beam is immersed in a partial vacuum and a source of heat provides heat to said nanometer-scale beam to cause said free-moving portion to move.

16. The system of claim 2, wherein thermal vibrations in said working substance or said nanometer-scale beam causes said free-moving portion to move.

17. The system of claim 2, wherein said nanometer-scale beam is provided in a housing having at least one input aperture and one output aperture.

18. The system of claim 2, wherein said nanometer-scale beam is provided in a housing having at least one input aperture and one output aperture and said nanometer-scale beam pumps a working substance from said input aperture to said output aperture.

19. The system of claim 2, wherein said nanometer-scale beam is provided in a housing having at least one input aperture and one output aperture, a working substance is pushed through said input aperture, and said nanometer-scale beam pumps said working substance through said output aperture.

20. The system of claim 2, wherein said nanometer-scale beam is provided in a housing having at least two apertures.

21. The system of claim 2, further comprising a source of heat for providing heat to said working substance or said nanometer-scale beam.

22. The system of claim 2, further comprising a source of heat for providing heat to said working substance or said nanometer-scale beam, wherein said source of heat is a microprocessor.

23. The system of claim 2, further comprising a source of heat for providing heat to said working substance or said nanometer-scale beam, wherein said source of heat is a battery.

24. The system of claim 2, further comprising a source of heat having an exhaust, wherein said exhaust is provided to said free-moving portion.

25. The system of claim 2, wherein said nanometer-scale beam is a nanotube.

26. The system of claim 2, wherein said nanometer-scale beam is a nanowire.

27. The system of claim 2, wherein said nanometer-scale beam is not electrically conductive.

28. The system of claim 2, wherein said mechanical stop is not electrically conductive.

29. The system of claim 2, wherein said mechanical stop is electrically conductive.

30. The system of claim 2, wherein said nanometer-scale beam is electrically conductive.

31. The system of claim 2, wherein said nanometer-scale beam is electrically conductive and said nanometer-scale beam is electrically isolated by being suspended from at least one non-conductive mountings.

32. The system of claim 2, wherein said mechanical stop is electrically conductive and said nanometer-scale beam is electrically conductive.

33. The system of claim 2, wherein said mechanical stop is not electrically conductive and said nanometer-scale beam is electrically conductive.

34. The system of claim 2, wherein said mechanical stop is electrically conductive and said mechanical stop is electrically isolated by being coupled only to a non-conductive layer.

35. The system of claim 2, further comprising control circuitry for providing an electrical charge to said nanometer-scale beam.

36. The system of claim 2, further comprising control circuitry for providing an electrical charge to said mechanical stop.

37. The system of claim 2, further comprising control circuitry for providing an electrical charge to a charge member layer provided in the proximity of said free-moving portion.

38. The system of claim 2, further comprising control circuitry for providing a first electrical charge to a first charge member layer provided in the proximity of said free-moving portion and a second electrical charge to a second charge member layer provided in the proximity of said free-moving portion.

39. The system of claim 2, further comprising control circuitry for providing a first electrical charge to a first charge member layer provided in the proximity of said free-moving portion, a second electrical charge to a second charge member layer provided in the proximity of said free-moving portion, and a third electrical charge to said nanometer-scale beam.

40. The system of claim 2, further comprising control circuitry for providing a first electrical charge to a first charge member layer provided in the proximity of said free-moving portion, a second electrical charge to a second charge member layer provided in the proximity of said free-moving portion, a third electrical charge to said nanometer-scale beam, and said control circuitry does not provide an electrical charge to said mechanical stop.

41. The system of claim 2, wherein an electrical charge is provided to said nanometer-scale beam.

42. The system of claim 2, wherein an electrical charge is provided to said mechanical stop.

43. The system of claim 2, wherein an electrical charge is provided to a charge member layer located in the vicinity of said free-moving portion.

44. The system of claim 2, further comprising a charge member layer located in the vicinity of said free-moving portion.

45. The system of claim 2, further comprising a charge member layer located in the vicinity of said free-moving portion wherein a non-conductive layer is provided between said charge member layer and said free-moving portion.

46. The system of claim 2, further comprising a charge member layer located in the vicinity of said free-moving portion wherein a non-conductive layer is provided between said charge member layer and said free-moving portion and a charge is provided to said charge member layer.

47. The system of claim 2, further comprising a charge member layer located in the vicinity of said free-moving portion wherein a non-conductive layer is provided between said charge member layer and said free-moving portion and a first charge is provided to said charge member layer having one polarity and a second charge having an opposite polarity is provided to said nanometer-scale beam.

48. The system of claim 2, further comprising a charge member layer located in the vicinity of said free-moving portion wherein a non-conductive layer is provided between said charge member layer and said free-moving portion and a first charge is provided to said charge member layer having one polarity and a second charge having the same polarity is provided to said nanometer-scale beam.

49. The system of claim 2, further comprising a second mechanical stop positioned to limit the movement of said nanometer-scale beam.

50. The system of claim 2, further comprising a second nanometer-scale beam having a second free-moving portion, wherein said mechanical stop limits the movement of said second nanometer-scale beam.

51. The system of claim 2, wherein said base is spherical.

52. The system of claim 2, wherein said base is spherical and said nanometer-scale beam provides thrust to move said spherical base.

53. The system of claim 2, further comprising a magnetic field generator that provides a magnetic field on said nanometer-scale beam.

54. The system of claim 2, further comprising a magnetic field generator that provides magnetic field on said nanometer-scale beam and a current is provided through said nanometer-scale beam to electromagnetically interact with said magnetic field.

55. The system of claim 2, wherein said nanometer-scale beam is electrically influenced.

56. The system of claim 2, wherein said nanometer-scale beam is electrically influenced electrostatically.

57. The system of claim 2, wherein said nanometer-scale beam is electrically influenced electromagnetically.

58. The system of claim 2, further comprising a source of heat for providing heat to said working substance or said nanometer-scale beam, wherein the temperature of said heat is changed, said free-moving portion is moving, and said change in temperature changes the speed of said movement.

59. The system of claim 2, wherein said nanometer-scale beam is operable to move both vertically and horizontally with respect to said base.

60. The system of claim 2, where said plurality of molecules move, on average, at a zero velocity and said nanometer-scale beam impacting said mechanical stop causes said plurality of molecules to move, on average, at a non-zero velocity in a direction.

61. The system of claim 2, wherein said nanometer-scale beam repeatedly impacts said mechanical stop and causes said working substance to flow in a direction.

62. The system of claim 2, wherein said nanometer-scale beam repeatedly impacts said mechanical stop and causes said working substance to flow in a direction opposite the mechanical stop with respect to said nanometer-scale beam.

63. A system comprising:

a housing;

a working substance having a plurality of molecules;

a plurality of nanometer-scale pumps immersed in said working substance and coupled to said housing, wherein said plurality of nanometer-scale pumps alters the average velocity of said working substance and each one of said nanometer-scale pumps comprises:

a nanometer-scale beam, having at least one portion that is free-to-move and having at least one other portion that is anchored to said housing; and

a mechanical stop located in the vicinity of said nanometer-scale beam that limits the movement of said nanometer-scale beam, wherein said limited motion of said free-moving portion alters the velocity of at least one of said plurality of molecules.

64. The system of claim 63, wherein said nanometer-scale beam is provided in a cantilever configuration.

65. The system of claim 63, wherein said nanometer-scale beam is provided in a jump rope configuration.

66. The system of claim 63, wherein said free-moving portion is operable to move into a position that is substantially parallel to said housing.

67. The system of claim 63, wherein said free-moving portion is operable to move into a position that is substantially parallel to said base and said mechanical stop is located in a position that is substantially vertical to said housing.

68. The system of claim 63, wherein said mechanical stop is the only structure limiting the movement of said free-moving portion and said mechanical stop is located on one side of said nanometer-scale beam to limit the range of movement of said free-moving portion on said one side.

69. The system of claim 63, wherein said mechanical stop comprises a layer of carbon.

70. The system of claim 63, wherein said mechanical stop is thicker than said nanometer-scale beam.

71. The system of claim 63, wherein said mechanical stop is cylindrical in shape.

72. The system of claim 63, wherein said mechanical stop is fabricated from the same material as said nanometer-scale beam.

73. The system of claim 63, wherein said mechanical stop is fabricated from a first material, said nanometer-scale beam is fabricated from a second material, and said first material has a greater stiffness per unit volume than said second material.

74. The system of claim 63, wherein the longest dimension of said nanometer-scale stop is less than the longest dimension of said mechanical beam.

75. The system of claim 63, wherein said nanometer-scale beam is immersed in a partial vacuum and a source of heat provides heat to said nanometer-scale beam to cause said free-moving portion to move.

76. The system of claim 63, wherein thermal vibrations in said working substance or said nanometer-scale beam causes said free-moving portion to move.

77. The system of claim 63, wherein said housing includes at least one input aperture and one output aperture.

78. The system of claim 63, wherein housing includes at least one input aperture and one output aperture and said nanometer-scale beam pumps a working substance from said input aperture to said output aperture.

79. The system of claim 63, wherein said housing includes at least one input aperture and one output aperture, a working substance is pushed through said input aperture, and said nanometer-scale beam pumps said working substance through said output aperture.

80. The system of claim 63, wherein housing includes at least two apertures.

81. The system of claim 63, further comprising a source of heat for providing heat to said working substance or said nanometer-scale beam.

82. The system of claim 63, further comprising a source of heat for providing heat to said working substance or said nanometer-scale beam, wherein said source of heat is a microprocessor.

83. The system of claim 63, further comprising a source of heat for providing heat to said working substance or said nanometer-scale beam, wherein said source of heat is a battery.

84. The system of claim 63, further comprising a source of heat having an exhaust, wherein said exhaust is provided to said free-moving portion.

85. The system of claim 63, wherein said nanometer-scale beam is a nanotube.

86. The system of claim 63, wherein said nanometer-scale beam is a nanowire.

87. The system of claim 63, wherein said nanometer-scale beam is not electrically conductive.

88. The system of claim 63, wherein said mechanical stop is not electrically conductive.

89. The system of claim 63, wherein said mechanical stop is electrically conductive.

90. The system of claim 63, wherein said nanometer-scale beam is electrically conductive.

91. The system of claim 63, wherein said nanometer-scale beam is electrically conductive and said nanometer-scale beam is electrically isolated by being suspended from at least one non-conductive mountings.

92. The system of claim 63, wherein said mechanical stop is electrically conductive and said nanometer-scale beam is electrically conductive.

93. The system of claim 63, wherein said mechanical stop is not electrically conductive and said nanometer-scale beam is electrically conductive.

94. The system of claim 63, wherein said mechanical stop is electrically conductive and said mechanical stop is electrically isolated by being coupled only to a non-conductive layer.

95. The system of claim 63, further comprising control circuitry for providing an electrical charge to said nanometer-scale beam.

96. The system of claim 63, further comprising control circuitry for providing an electrical charge to said mechanical stop.

97. The system of claim 63, further comprising control circuitry for providing an electrical charge to a charge member layer provided in the proximity of said free-moving portion.

98. The system of claim 63, further comprising control circuitry for providing a first electrical charge to a first charge member layer provided in the proximity of said free-moving portion and a second electrical charge to a second charge member layer provided in the proximity of said free-moving portion.

99. The system of claim 63, further comprising control circuitry for providing a first electrical charge to a first charge member layer provided in the proximity of said free-moving portion, a second electrical charge to a second charge member layer provided in the proximity of said free-moving portion, and a third electrical charge to said nanometer-scale beam.

100. The system of claim 63, further comprising control circuitry for providing a first electrical charge to a first charge member layer provided in the proximity of said free-moving portion, a second electrical charge to a second charge member layer provided in the proximity of said free-moving portion, a third electrical charge to said nanometer-scale beam, and said control circuitry does not provide an electrical charge to said mechanical stop.

101. The system of claim 63, wherein an electrical charge is provided to said nanometer-scale beam.

102. The system of claim 63, wherein an electrical charge is provided to said mechanical stop.

103. The system of claim 63, wherein an electrical charge is provided to a charge member layer located in the vicinity of said free-moving portion.

104. The system of claim 63, further comprising a charge member layer located in the vicinity of said free-moving portion.

105. The system of claim 63, further comprising a charge member layer located in the vicinity of said free-moving portion wherein a non-conductive layer is provided between said charge member layer and said free-moving portion.

106. The system of claim 63, further comprising a charge member layer located in the vicinity of said free-moving portion wherein a non-conductive layer is provided between said charge member layer and said free-moving portion and a charge is provided to said charge member layer.

107. The system of claim 63, further comprising a charge member layer located in the vicinity of said free-moving portion wherein a non-conductive layer is provided between said charge member layer and said free-moving portion and a first charge is provided to said charge member layer having one polarity and a second charge having an opposite polarity is provided to said nanometer-scale beam.

108. The system of claim 63, further comprising a charge member layer located in the vicinity of said free-moving portion wherein a non-conductive layer is provided between said charge member layer and said free-moving portion and a first charge is provided to said charge member layer having one polarity and a second charge having the same polarity is provided to said nanometer-scale beam.

109. The system of claim 63, further comprising a second mechanical stop positioned to limit the movement of said nanometer-scale beam.

110. The system of claim 63, further comprising a second nanometer-scale beam having a second free-moving portion, wherein said mechanical stop limits the movement of said second nanometer-scale beam.

111. The system of claim 63, wherein said housing is spherical.

112. The system of claim 63, wherein said housing is spherical and said nanometer-scale beam provides thrust to move said spherical base.

113. The system of claim 63, further comprising a magnetic field generator that provides a magnetic field on said nanometer-scale beam.

114. The system of claim 63, further comprising a magnetic field generator that provides magnetic field on said nanometer-scale beam and a current is provided through said nanometer-scale beam to electromagnetically interact with said magnetic field.

115. The system of claim 63, wherein said nanometer-scale beam is electrically influenced.

116. The system of claim 63, wherein said nanometer-scale beam is electrically influenced electrostatically.

117. The system of claim 63, wherein said nanometer-scale beam is electrically influenced electromagnetically.

118. The system of claim 63, further comprising a source of heat for providing heat to said working substance or said nanometer-scale beam, wherein the temperature of said heat is changed, said free-moving portion is moving, and said change in temperature changes the speed of said movement.

119. The system of claim 63, wherein said nanometer-scale beam is operable to move both vertically and horizontally with respect to said base.

120. The system of claim 63, where said plurality of molecules move, on average, at a zero velocity and said nanometer-scale beam impacting said mechanical stop causes said plurality of molecules to move, on average at a non-zero velocity in a direction.

121. The system of claim 63, wherein said nanometer-scale beam repeatedly impacts said mechanical stop and causes said working substance to flow in a direction.

122. The system of claim 63, wherein said nanometer-scale beam repeatedly impacts said mechanical stop and causes said working substance to flow in a direction opposite the mechanical stop with respect to said nanometer-scale beam.

123. The system of claim 63, wherein said nanometer-scale pumps increases the velocity, on average, of said working substance in a direction.

124. The system of claim 63, wherein said nanometer-scale pumps cause said working substance to flow in a direction.

125. The system of claim 63, wherein said nanometer-scale pumps are operable to be controlled to cause said working substance to flow in one of a plurality of pre-determined directions.

126. The system of claim 63, further comprising control circuitry for controlling the direction that said plurality of nanometer-scale pumps move said working substance.

127. A system comprising:

a base;

a working substance having a plurality of molecules;

a nanometer-scale beam coupled to said base and having at least one portion that is free-to-move, wherein said nanometer-scale beam is immersed in said working substance; and

a mechanical stop coupled to said base and located within the vicinity of said nanometer-scale beam such that said mechanical stop limits the movement of said free-moving portion, wherein said nanometer-scale beam increases the velocity, on average, of said plurality of molecules in a direction away from said mechanical stop with respect to said nanometer-scale beam.

128. A system comprising:

a base;

a working substance having a plurality of molecules;

a mechanical stop coupled to said base and located within the vicinity of said nanometer-scale beam such that said mechanical stop limits the movement of said free-moving portion, said nanometer-scale beam moves toward said mechanical stop in a first direction, said nanometer-scale beam impacts said mechanical stop after moving towards said mechanical stop, said nanometer-scale beam bounces off said mechanical stop and moves in a second direction, and said nanometer-scale beam increases the velocity of said plurality of molecules in said second direction.

129. A system comprising:

a base;

a working substance having a plurality of molecules;

a mechanical stop coupled to said base and located within the vicinity of said nanometer-scale beam such that said mechanical stop limits the movement of said free-moving portion, wherein the interaction between said free-moving portion and said mechanical stop alters the average velocity of said plurality of molecules.

130. A system comprising:

a base;

a working substance having a plurality of molecules;

a plurality of nanometer-scale pumps, wherein each one of said plurality of nanometer-scale pumps comprises:

a nanometer-scale beam;

a mechanical stop located in the vicinity of said nanometer-scale beam such that said mechanical stop limits the movement of said nanometer-scale beam; and

circuitry, wherein a first control signal provided to said circuitry causes said plurality of nanometer-scale pumps to pump said working substance in a first direction and a second control signal provided to said control circuitry causes said plurality of nanometer-scale pumps to pump said working substance in a second direction.

131. A system comprising:

a base;

a working substance having a plurality of molecules;

a nanometer-scale pump, wherein said nanometer-scale pump comprises:

a plurality of nanometer-scale beams; and

a mechanical stop located in the vicinity of said plurality of nanometer-scale beams such that said mechanical stop limits the movement of each one of said plurality of nanometer-scale beams.

132. The system of claim 131, wherein said limited motion of said plurality of nanometer-scale beams alter the average velocity of said working substance.